MPF102
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate?Source Breakdown Voltage
(IG
= ?10
Adc, VDS
= 0)
V(BR)GSS
?25
?
Vdc
Gate Reverse Current
(VGS
= ?15 Vdc, V
DS
= 0)
(VGS
= ?15 Vdc, V
DS
= 0, T
A
= 100
°C)
IGSS
?
?
?2.0
?2.0
nAdc
Adc
Gate?Source Cutoff Voltage
(VDS
= 15 Vdc, I
D
= 2.0 nAdc)
VGS(off)
?
?8.0
Vdc
Gate?Source Voltage
(VDS
= 15 Vdc, I
D
= 0.2 mAdc)
VGS
?0.5
?7.5
Vdc
ON CHARACTERISTICS
Zero?Gate?Voltage Drain Current (Note 1)
(VDS
= 15 Vdc, V
GS
= 0 Vdc)
IDSS
2.0
20
mAdc
SMALL?SIGNAL CHARACTERISTICS
Forward Transfer Admittance (Note 1)
(VDS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
(VDS
= 15 Vdc, V
GS
= 0, f = 100 MHz)
?yfs?
2000
1600
7500
?
mhos
Input Admittance
(VDS
= 15 Vdc, V
GS
= 0, f = 100 MHz)
Re(yis)
?
800
mhos
Output Conductance
(VDS
= 15 Vdc, V
GS
= 0, f = 100 MHz)
Re(yos)
?
200
mhos
Input Capacitance
(VDS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
Ciss
?
7.0
pF
Reverse Transfer Capacitance
(VDS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
Crss
?
3.0
pF
1. Pulse Test; Pulse Width
630 ms, Duty Cycle
10%.
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